UPRVUNL AE
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Electronics And Computer ScienceEnglish
Exam overviewPractice session
At room temperature, the intrinsic carrier concentration of silicon is approximately 1.5 * 10^10 cm^-3. If silicon is doped with donor atoms at a concentration of N_D = 10^16 cm^-3, what is the hole concentration (p) under thermal equilibrium?
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