Taiwan Electrical Engineering Technologist Examination

Practice session

A bipolar junction transistor (BJT) is biased in the forward-active region with a collector DC bias current of I_C = 2.6 mA. Assuming room temperature operation with thermal voltage V_T = 26 mV and common-emitter current gain beta = 100, what are the small-signal transconductance g_m and small-signal base-emitter input resistance r_pi?

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